IRFU5410 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFU5410
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 66 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 58(max) nC
trⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 260 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.205 Ohm
Тип корпуса: TO251
IRFU5410 Datasheet (PDF)
irfr5410pbf irfu5410pbf.pdf
PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech
irfr5410pbf irfu5410pbf.pdf
PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech
irfu5410.pdf
isc P-Channel MOSFET Transistor IRFU5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -100
irfr540zpbf irfu540zpbf.pdf
PD - 96141BIRFR540ZPbFFeaturesIRFU540ZPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl 175C Operating TemperatureDl Fast SwitchingVDSS = 100Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-Freel Halogen-FreeRDS(on) = 28.5mGDescriptionID = 35AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achiev
irfu540z.pdf
APPROVEDPD - TBDAUTOMOTIVE MOSFETIRFR540ZIRFU540ZFeatureslAdvanced Process TechnologyHEXFET Power MOSFETlUltra Low On-ResistanceDl175C Operating TemperatureVDSS = 100VlFast SwitchinglRepetitive Avalanche Allowed up to TjmaxRDS(on) = 28.5mGDescriptionID = 35ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET utilizes the l
auirfr540z auirfu540z.pdf
AUTOMOTIVE GRADEAUIRFR540ZAUIRFU540ZHEXFET Power MOSFETVDSS 100VDDRDS(on) typ. 22.5mS max. 28.5m SDGGGID 35AD-Pak I-PakSAUIRFR540Z AUIRFU540ZApplicationsl Automatic Voltage Regulator (AVR) GDSl Solenoid Injection Gate Drain Sourcel Body Controll Low Power Automotive ApplicationsStandard PackBase part number Package Type Orderable Part Number
auirfr540z auirfu540z.pdf
AUIRFR540Z AUTOMOTIVE GRADE AUIRFU540Z HEXFET Power MOSFET Application VDSS 100V Automatic Voltage Regulator (AVR) RDS(on) typ. 22.5m Solenoid Injection Body Control max. 28.5m Low Power Automotive Applications ID 35A D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the lates
irfu540z.pdf
isc N-Channel MOSFET Transistor IRFU540ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Другие MOSFET... IRFU3303 , IRFU3910 , IRFU410 , IRFU4105 , IRFU411 , IRFU420 , IRFU420A , IRFU5305 , 5N50 , IRFU5505 , IRFU6215 , IRFU9010 , IRFU9012 , IRFU9014 , IRFU9015 , IRFU9020 , IRFU9022 .
Список транзисторов
Обновления
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