TMU4N65AZ Datasheet. Specs and Replacement
Type Designator: TMU4N65AZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: I-PAK
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TMU4N65AZ substitution
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TMU4N65AZ datasheet
tmd4n65az tmu4n65az.pdf
TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒
tmd4n65z tmu4n65z.pdf
TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒
tmd4n60 tmu4n60.pdf
TMD4N60/TMU4N60 TMD4N60G/TMU4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHS TMD4N60G/TMU4N60G D-PAK/I-PAK ... See More ⇒
tmd4n60az tmu4n60az.pdf
TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A ... See More ⇒
Detailed specifications: TMU2N65AZ, TMU3N40ZG, TMU3N50AZ, TMU3N50Z, TMU3N80G, TMU3N90, TMU4N60, TMU4N60AZ, IRFP250, TMU4N65Z, TMU5N40ZG, TMU5N50, TMU5N50G, TMU5N60AZ, TMU5N60Z, TMU630Z, TMU6N65G
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