TMU5N60Z Datasheet. Specs and Replacement

Type Designator: TMU5N60Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: I-PAK

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TMU5N60Z substitution

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TMU5N60Z datasheet

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TMU5N60Z

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 4.2A ... See More ⇒

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 tmd5n60az tmu5n60az.pdf pdf_icon

TMU5N60Z

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒

 9.1. Size:345K  trinnotech
 tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf pdf_icon

TMU5N60Z

TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS ... See More ⇒

 9.2. Size:617K  trinnotech
 tmd5n40zg tmu5n40zg.pdf pdf_icon

TMU5N60Z

TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso... See More ⇒

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Detailed specifications: TMU4N60, TMU4N60AZ, TMU4N65AZ, TMU4N65Z, TMU5N40ZG, TMU5N50, TMU5N50G, TMU5N60AZ, STF13NM60N, TMU630Z, TMU6N65G, TMU7N60Z, TMU7N65AZ, TMU7N65Z, TMU830, TMU830AZ, TMU830Z

Keywords - TMU5N60Z MOSFET specs

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