TMU5N60Z Datasheet and Replacement
Type Designator: TMU5N60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 69 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: I-PAK
TMU5N60Z substitution
TMU5N60Z Datasheet (PDF)
tmd5n60z tmu5n60z.pdf
TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 4.2A
tmd5n60az tmu5n60az.pdf
TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf
TMD5N50/TMU5N50TMD5N50G/TMU5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DI-PAKD-PAKGSDevice Package Marking RemarkTMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS
tmd5n40zg tmu5n40zg.pdf
TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso
Datasheet: TMU4N60 , TMU4N60AZ , TMU4N65AZ , TMU4N65Z , TMU5N40ZG , TMU5N50 , TMU5N50G , TMU5N60AZ , 2N60 , TMU630Z , TMU6N65G , TMU7N60Z , TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z .
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