TMU630Z MOSFET. Datasheet pdf. Equivalent
Type Designator: TMU630Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.6 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 86 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: I-PAK
TMU630Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMU630Z Datasheet (PDF)
1.1. tmu630z.pdf 
Size:453K _update
TMD630Z(G)/TMU630Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A <0.4W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD630Z/TMU630Z D-PAK/I-PAK TMD630Z/TMU630Z RoHS TMD630ZG/TMD630ZG D-PAK/I-PAK TMD630ZG/TMD630ZG Ha
Datasheet: TMU4N60AZ , TMU4N65AZ , TMU4N65Z , TMU5N40ZG , TMU5N50 , TMU5N50G , TMU5N60AZ , TMU5N60Z , IRFP260N , TMU6N65G , TMU7N60Z , TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z .
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