TMU630Z Specs and Replacement

Type Designator: TMU630Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: I-PAK

TMU630Z substitution

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TMU630Z datasheet

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 tmd630z tmu630z.pdf pdf_icon

TMU630Z

TMD630Z(G)/TMU630Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒

Detailed specifications: TMU4N60AZ, TMU4N65AZ, TMU4N65Z, TMU5N40ZG, TMU5N50, TMU5N50G, TMU5N60AZ, TMU5N60Z, AO3407, TMU6N65G, TMU7N60Z, TMU7N65AZ, TMU7N65Z, TMU830, TMU830AZ, TMU830Z, TMU8N25Z

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.