TMU630Z Datasheet and Replacement
Type Designator: TMU630Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: I-PAK
TMU630Z substitution
TMU630Z Datasheet (PDF)
tmd630z tmu630z.pdf
TMD630Z(G)/TMU630Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A
Datasheet: TMU4N60AZ , TMU4N65AZ , TMU4N65Z , TMU5N40ZG , TMU5N50 , TMU5N50G , TMU5N60AZ , TMU5N60Z , 7N60 , TMU6N65G , TMU7N60Z , TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z .
History: AOSS21311C | VBE2311
Keywords - TMU630Z MOSFET datasheet
TMU630Z cross reference
TMU630Z equivalent finder
TMU630Z lookup
TMU630Z substitution
TMU630Z replacement
History: AOSS21311C | VBE2311
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