All MOSFET. TMU6N65G Datasheet

 

TMU6N65G Datasheet and Replacement


   Type Designator: TMU6N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: I-PAK
 

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TMU6N65G Datasheet (PDF)

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TMU6N65G

TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax Low gate charge ID = 5.5A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

 9.1. Size:429K  trinnotech
 tmd6n70g tmu6n70g tmd6n70 tmu6n70.pdf pdf_icon

TMU6N65G

TMD6N70(G)/TMU6N70(G) Features VDSS = 770 V @Tjmax Low gate charge ID = 5A 100% avalanche tested RDS(on) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N70/TMU6N70 D-PAK/I-PAK TMD6N70/TMU6N70 RoHS TMD6N70G/TMU6N70G D-PAK/I-PAK

Datasheet: TMU4N65AZ , TMU4N65Z , TMU5N40ZG , TMU5N50 , TMU5N50G , TMU5N60AZ , TMU5N60Z , TMU630Z , 75N75 , TMU7N60Z , TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z , TMU8N50Z .

History: INJ0312AP1 | AONR26309A | HM4490 | BUK7Y1R4-40H | SGSP474 | 2SK1352 | 2SK3646-01SJ

Keywords - TMU6N65G MOSFET datasheet

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