All MOSFET. TMU6N65G Datasheet

 

TMU6N65G MOSFET. Datasheet pdf. Equivalent

Type Designator: TMU6N65G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: I-PAK

TMU6N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMU6N65G Datasheet (PDF)

1.1. tmd6n65g tmu6n65g.pdf Size:603K _update

TMU6N65G
TMU6N65G

TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax  Low gate charge ID = 5.5A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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