All MOSFET. TMU6N65G Datasheet

 

TMU6N65G MOSFET. Datasheet pdf. Equivalent

Type Designator: TMU6N65G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: I-PAK

TMU6N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMU6N65G Datasheet (PDF)

1.1. tmd6n65g tmu6n65g.pdf Size:603K _update

TMU6N65G
TMU6N65G

TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax  Low gate charge ID = 5.5A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

Datasheet: TMU4N65AZ , TMU4N65Z , TMU5N40ZG , TMU5N50 , TMU5N50G , TMU5N60AZ , TMU5N60Z , TMU630Z , 2SK2545 , TMU7N60Z , TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z , TMU8N50Z .

Back to Top

 


TMU6N65G
  TMU6N65G
  TMU6N65G
 

social 

LIST

Last Update

MOSFET: SQV120N10-3M8 | SQS850EN | SQS840EN | SQS484EN | SQS482EN | SQS466EEN | SQS464EEN | SQS462EN | SQS460EN | SQS423EN | SQS420EN | SQS405ENW | SQS405EN | SQS404EN | SQS401EN |

 

 

Back to Top