All MOSFET. TMU7N65Z Datasheet

 

TMU7N65Z Datasheet and Replacement


   Type Designator: TMU7N65Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: I-PAK
 

 TMU7N65Z substitution

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TMU7N65Z Datasheet (PDF)

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TMU7N65Z

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A

 7.1. Size:461K  trinnotech
 tmd7n65az tmu7n65az.pdf pdf_icon

TMU7N65Z

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

 7.2. Size:1062K  cn wuxi unigroup
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TMU7N65Z

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM

 8.1. Size:457K  trinnotech
 tmd7n60z tmu7n60z.pdf pdf_icon

TMU7N65Z

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A

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Datasheet: TMU5N50 , TMU5N50G , TMU5N60AZ , TMU5N60Z , TMU630Z , TMU6N65G , TMU7N60Z , TMU7N65AZ , IRFB31N20D , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z , TMU8N50Z , TMU8N60AZ , IRF1405ZL-7PPBF , IRF1405ZLPBF .

Keywords - TMU7N65Z MOSFET datasheet

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