TMU8N25Z Specs and Replacement
Type Designator: TMU8N25Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 74 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: I-PAK
TMU8N25Z substitution
- MOSFET ⓘ Cross-Reference Search
TMU8N25Z datasheet
tmd8n25z tmu8n25z.pdf
TMD8N25Z(G)/TMU8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A ... See More ⇒
tmd8n60az tmu8n60az.pdf
TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A ... See More ⇒
tmd8n50z tmu8n50z.pdf
TMD8N50Z(G)/TMU8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒
tma8n60h tmd8n60h tmu8n60h.pdf
TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-... See More ⇒
Detailed specifications: TMU630Z, TMU6N65G, TMU7N60Z, TMU7N65AZ, TMU7N65Z, TMU830, TMU830AZ, TMU830Z, 8N60, TMU8N50Z, TMU8N60AZ, IRF1405ZL-7PPBF, IRF1405ZLPBF, IRF1405ZPBF, IRF1405ZS-7PPBF, IRF1405ZSPBF, IRF1407PBF
Keywords - TMU8N25Z MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
