FMP06N60E Datasheet and Replacement
Type Designator: FMP06N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220AB
FMP06N60E substitution
FMP06N60E Datasheet (PDF)
fmp06n60e.pdf

FMP06N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmp06n60es.pdf

FMP06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5V
Datasheet: IRF1405ZPBF , IRF1405ZS-7PPBF , IRF1405ZSPBF , IRF1407PBF , IRF140SMD , FMP03N60E , FMP05N50E , FMP05N60E , IRF520 , FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E , FMP12N50ES , FMP12N60ES .
History: IRF1405ZSPBF | SSM4501GSD | DHB8290 | CSD16412Q5A | SSM4507GM | AON7528 | DHS022N06E
Keywords - FMP06N60E MOSFET datasheet
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History: IRF1405ZSPBF | SSM4501GSD | DHB8290 | CSD16412Q5A | SSM4507GM | AON7528 | DHS022N06E



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