All MOSFET. FMP06N60ES Datasheet

 

FMP06N60ES Datasheet and Replacement


   Type Designator: FMP06N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220AB
      - MOSFET Cross-Reference Search

 

FMP06N60ES Datasheet (PDF)

 ..1. Size:478K  fuji
 fmp06n60es.pdf pdf_icon

FMP06N60ES

FMP06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5V

 5.1. Size:502K  fuji
 fmp06n60e.pdf pdf_icon

FMP06N60ES

FMP06N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SI68H11 | APT10021JFLL | SSW65R190S2 | NP180N04TUJ | SM4186T9RL | SRT10N160LD | NCE30P12BS

Keywords - FMP06N60ES MOSFET datasheet

 FMP06N60ES cross reference
 FMP06N60ES equivalent finder
 FMP06N60ES lookup
 FMP06N60ES substitution
 FMP06N60ES replacement

 

 
Back to Top

 


 
.