All MOSFET. FMP08N50E Datasheet

 

FMP08N50E Datasheet and Replacement


   Type Designator: FMP08N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm
   Package: TO-220AB
 

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FMP08N50E Datasheet (PDF)

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FMP08N50E

FMP08N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: IRF1407PBF , IRF140SMD , FMP03N60E , FMP05N50E , FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , 2SK3918 , FMP10N60E , FMP11N60E , FMP12N50E , FMP12N50ES , FMP12N60ES , FMP13N60E , FMP13N60ES , FMP16N50E .

History: H04N60F | BUZ83 | NCE60NF055F | SFF240J | WMN30N80M3 | 2SK1008-01

Keywords - FMP08N50E MOSFET datasheet

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