All MOSFET. FMP10N60E Datasheet

 

FMP10N60E Datasheet and Replacement


   Type Designator: FMP10N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm
   Package: TO-220AB
 

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FMP10N60E Datasheet (PDF)

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FMP10N60E

FMP10N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: IRF140SMD , FMP03N60E , FMP05N50E , FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , FMP08N50E , MMD60R360PRH , FMP11N60E , FMP12N50E , FMP12N50ES , FMP12N60ES , FMP13N60E , FMP13N60ES , FMP16N50E , FMP16N50ES .

History: FMP12N60ES

Keywords - FMP10N60E MOSFET datasheet

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