FMP10N60E Specs and Replacement

Type Designator: FMP10N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm

Package: TO-220AB

FMP10N60E substitution

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FMP10N60E datasheet

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FMP10N60E

FMP10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒

Detailed specifications: IRF140SMD, FMP03N60E, FMP05N50E, FMP05N60E, FMP06N60E, FMP06N60ES, FMP07N50E, FMP08N50E, RU7088R, FMP11N60E, FMP12N50E, FMP12N50ES, FMP12N60ES, FMP13N60E, FMP13N60ES, FMP16N50E, FMP16N50ES

Keywords - FMP10N60E MOSFET specs

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