FMP13N60ES Datasheet and Replacement
Type Designator: FMP13N60ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO-220AB
FMP13N60ES substitution
FMP13N60ES Datasheet (PDF)
fmp13n60es.pdf

FMP13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5
fmp13n60e.pdf

FMP13N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
Datasheet: FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E , FMP12N50ES , FMP12N60ES , FMP13N60E , IRFP064N , FMP16N50E , FMP16N50ES , FMP16N60E , FMP16N60ES , FMP20N50E , FMP20N50ES , FMP20N60S1 , FMP30N60S1 .
History: AFN4486 | BUK6507-55C | 2SK373 | BUK626R2-40C | IXTA76P10T | DMN32D2LFB4 | PMGD130UN
Keywords - FMP13N60ES MOSFET datasheet
FMP13N60ES cross reference
FMP13N60ES equivalent finder
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History: AFN4486 | BUK6507-55C | 2SK373 | BUK626R2-40C | IXTA76P10T | DMN32D2LFB4 | PMGD130UN



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