All MOSFET. FMP13N60ES Datasheet

 

FMP13N60ES Datasheet and Replacement


   Type Designator: FMP13N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-220AB
 

 FMP13N60ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMP13N60ES Datasheet (PDF)

 ..1. Size:528K  fuji
 fmp13n60es.pdf pdf_icon

FMP13N60ES

FMP13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

 5.1. Size:466K  fuji
 fmp13n60e.pdf pdf_icon

FMP13N60ES

FMP13N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E , FMP12N50ES , FMP12N60ES , FMP13N60E , IRFP064N , FMP16N50E , FMP16N50ES , FMP16N60E , FMP16N60ES , FMP20N50E , FMP20N50ES , FMP20N60S1 , FMP30N60S1 .

History: WMM07N65C4 | TSM414K34CS | AOTF15S60 | SSF65R190S3 | AOT210L | SVS5N70FD2 | FMP13N60E

Keywords - FMP13N60ES MOSFET datasheet

 FMP13N60ES cross reference
 FMP13N60ES equivalent finder
 FMP13N60ES lookup
 FMP13N60ES substitution
 FMP13N60ES replacement

 

 
Back to Top

 


 
.