FMR09N90E Specs and Replacement

Type Designator: FMR09N90E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-3PF

FMR09N90E substitution

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FMR09N90E datasheet

 ..1. Size:452K  fuji
 fmr09n90e.pdf pdf_icon

FMR09N90E

FMR09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.5V) H... See More ⇒

 ..2. Size:210K  inchange semiconductor
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FMR09N90E

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FMR09N90E FEATURES With TO-3PML package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

Detailed specifications: FMP16N50ES, FMP16N60E, FMP16N60ES, FMP20N50E, FMP20N50ES, FMP20N60S1, FMP30N60S1, FMP76-010T, IRFP460, FMR11N90E, FMR17N60ES, FMR19N60E, FMR19N60ES, FMR21N50ES, FMR23N50ES, FMR23N60E, FMR23N60ES

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.