All MOSFET. FMR11N90E Datasheet

 

FMR11N90E Datasheet and Replacement


   Type Designator: FMR11N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-3PF
 

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FMR11N90E Datasheet (PDF)

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FMR11N90E

FMR11N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.5V)H

Datasheet: FMP16N60E , FMP16N60ES , FMP20N50E , FMP20N50ES , FMP20N60S1 , FMP30N60S1 , FMP76-010T , FMR09N90E , IRFZ44 , FMR17N60ES , FMR19N60E , FMR19N60ES , FMR21N50ES , FMR23N50ES , FMR23N60E , FMR23N60ES , FMR28N50E .

History: CEF08N8 | FXN10N50F | BUK116-50L

Keywords - FMR11N90E MOSFET datasheet

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