FMR17N60ES Specs and Replacement

Type Designator: FMR17N60ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-3PF

FMR17N60ES substitution

- MOSFET ⓘ Cross-Reference Search

 

FMR17N60ES datasheet

 ..1. Size:517K  fuji
 fmr17n60es.pdf pdf_icon

FMR17N60ES

FMR17N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V) ... See More ⇒

Detailed specifications: FMP16N60ES, FMP20N50E, FMP20N50ES, FMP20N60S1, FMP30N60S1, FMP76-010T, FMR09N90E, FMR11N90E, IRF640, FMR19N60E, FMR19N60ES, FMR21N50ES, FMR23N50ES, FMR23N60E, FMR23N60ES, FMR28N50E, FMR28N50ES

Keywords - FMR17N60ES MOSFET specs

 FMR17N60ES cross reference

 FMR17N60ES equivalent finder

 FMR17N60ES pdf lookup

 FMR17N60ES substitution

 FMR17N60ES replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility