FMV05N60E Specs and Replacement

Type Designator: FMV05N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-220F

FMV05N60E substitution

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FMV05N60E datasheet

 ..1. Size:487K  fuji
 fmv05n60e.pdf pdf_icon

FMV05N60E

FMV05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒

 8.1. Size:376K  fuji
 fmv05n50e.pdf pdf_icon

FMV05N60E

FMV05N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒

Detailed specifications: FMR21N50ES, FMR23N50ES, FMR23N60E, FMR23N60ES, FMR28N50E, FMR28N50ES, FMV03N60E, FMV05N50E, IRFB4115, FMV06N60E, FMV06N60ES, FMV06N90E, FMV07N50E, FMV08N50E, FMV09N90E, FMV10N60E, FMV10N80E

Keywords - FMV05N60E MOSFET specs

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