FMV05N60E Datasheet and Replacement
Type Designator: FMV05N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-220F
FMV05N60E substitution
FMV05N60E Datasheet (PDF)
fmv05n60e.pdf

FMV05N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.
fmv05n50e.pdf

FMV05N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.
Datasheet: FMR21N50ES , FMR23N50ES , FMR23N60E , FMR23N60ES , FMR28N50E , FMR28N50ES , FMV03N60E , FMV05N50E , AON6414A , FMV06N60E , FMV06N60ES , FMV06N90E , FMV07N50E , FMV08N50E , FMV09N90E , FMV10N60E , FMV10N80E .
History: IXTP16N50P | HD50N06D | IXTY64N055T | FMV06N60E | BLF6G10LS-200RN | TMD5N40ZG | IRF1010EZ
Keywords - FMV05N60E MOSFET datasheet
FMV05N60E cross reference
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History: IXTP16N50P | HD50N06D | IXTY64N055T | FMV06N60E | BLF6G10LS-200RN | TMD5N40ZG | IRF1010EZ



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