FMV07N50E Specs and Replacement

Type Designator: FMV07N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220F

FMV07N50E substitution

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FMV07N50E datasheet

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FMV07N50E

FMV07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒

Detailed specifications: FMR28N50E, FMR28N50ES, FMV03N60E, FMV05N50E, FMV05N60E, FMV06N60E, FMV06N60ES, FMV06N90E, 7N65, FMV08N50E, FMV09N90E, FMV10N60E, FMV10N80E, FMV11N60E, FMV11N90E, FMV12N50E, FMV12N50ES

Keywords - FMV07N50E MOSFET specs

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