All MOSFET. FMV07N50E Datasheet

 

FMV07N50E Datasheet and Replacement


   Type Designator: FMV07N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220F
 

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FMV07N50E Datasheet (PDF)

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FMV07N50E

FMV07N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

Datasheet: FMR28N50E , FMR28N50ES , FMV03N60E , FMV05N50E , FMV05N60E , FMV06N60E , FMV06N60ES , FMV06N90E , STP75NF75 , FMV08N50E , FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES .

History: IRF3305 | SE150110G | SE150180G | BS170PSTOA

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