All MOSFET. FMV08N50E Datasheet

 

FMV08N50E Datasheet and Replacement


   Type Designator: FMV08N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm
   Package: TO-220F
 

 FMV08N50E substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMV08N50E Datasheet (PDF)

 ..1. Size:353K  fuji
 fmv08n50e.pdf pdf_icon

FMV08N50E

FMV08N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

Datasheet: FMR28N50ES , FMV03N60E , FMV05N50E , FMV05N60E , FMV06N60E , FMV06N60ES , FMV06N90E , FMV07N50E , AON7408 , FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES , FMV12N60ES .

History: H4N60U | GC11N65T

Keywords - FMV08N50E MOSFET datasheet

 FMV08N50E cross reference
 FMV08N50E equivalent finder
 FMV08N50E lookup
 FMV08N50E substitution
 FMV08N50E replacement

 

 
Back to Top

 


 
.