FMV08N50E Specs and Replacement

Type Designator: FMV08N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm

Package: TO-220F

FMV08N50E substitution

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FMV08N50E datasheet

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FMV08N50E

FMV08N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒

Detailed specifications: FMR28N50ES, FMV03N60E, FMV05N50E, FMV05N60E, FMV06N60E, FMV06N60ES, FMV06N90E, FMV07N50E, IRFP250N, FMV09N90E, FMV10N60E, FMV10N80E, FMV11N60E, FMV11N90E, FMV12N50E, FMV12N50ES, FMV12N60ES

Keywords - FMV08N50E MOSFET specs

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