FMV09N90E Datasheet and Replacement
Type Designator: FMV09N90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220F
FMV09N90E substitution
FMV09N90E Datasheet (PDF)
fmv09n90e.pdf

FMV09N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.
fmv09n70e.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV09N70EFEATURESdrain-source on-resistance:RDS(on) 1.4 (max)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersABSOLUTE MAXIMUM RATINGS(T
Datasheet: FMV03N60E , FMV05N50E , FMV05N60E , FMV06N60E , FMV06N60ES , FMV06N90E , FMV07N50E , FMV08N50E , 7N65 , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES , FMV12N60ES , FMV13N60E .
Keywords - FMV09N90E MOSFET datasheet
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History: IRFZ44A | QM2410G



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