All MOSFET. FMV09N90E Datasheet

 

FMV09N90E MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMV09N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F

 FMV09N90E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMV09N90E Datasheet (PDF)

 ..1. Size:454K  fuji
 fmv09n90e.pdf

FMV09N90E FMV09N90E

FMV09N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.

 8.1. Size:240K  inchange semiconductor
 fmv09n70e.pdf

FMV09N90E FMV09N90E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV09N70EFEATURESdrain-source on-resistance:RDS(on) 1.4 (max)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersABSOLUTE MAXIMUM RATINGS(T

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTP10P15T

 

 
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