FMV09N90E MOSFET Datasheet: N-Ch, 900V, 9A. Full specification with pinout and replacement list

FMV09N90E Specs and Replacement

Type Designator: FMV09N90E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 150 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-220F

FMV09N90E substitution

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FMV09N90E datasheet

..1. Size:454K fuji
fmv09n90e.pdf pdf_icon

FMV09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.... See More ⇒

8.1. Size:240K inchange semiconductor
fmv09n70e.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMV09N70E FEATURES drain-source on-resistance RDS(on) 1.4 (max) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

Detailed specifications: FMV03N60E , FMV05N50E , FMV05N60E , FMV06N60E , FMV06N60ES , FMV06N90E , FMV07N50E , FMV08N50E , IRF630 , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES , FMV12N60ES , FMV13N60E .