All MOSFET. FMV13N60E Datasheet

 

FMV13N60E Datasheet and Replacement


   Type Designator: FMV13N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-220F
 

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FMV13N60E Datasheet (PDF)

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FMV13N60E

FMV13N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

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FMV13N60E

FMV13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

Datasheet: FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES , FMV12N60ES , IRLB4132 , FMV13N60ES , FMV16N50E , FMV16N50ES , FMV16N60E , FMV16N60ES , FMV17N60ES , FMV19N60E , FMV19N60ES .

History: 2N6659X | IRF640NLPBF | FP20W50VX2 | STU446S | IPF039N03LG | FP20W60C3

Keywords - FMV13N60E MOSFET datasheet

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