FMV23N50ES PDF Specs and Replacement
Type Designator: FMV23N50ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.245 Ohm
Package: TO-220F
FMV23N50ES substitution
FMV23N50ES PDF Specs
fmv23n50es.pdf
FMV23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2... See More ⇒
fmv23n50e.pdf
FMV23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒
Detailed specifications: FMV16N60ES , FMV17N60ES , FMV19N60E , FMV19N60ES , FMV20N50E , FMV20N50ES , FMV20N60S1 , FMV21N50ES , IRFB3607 , FMV24N25G , FMV30N60S1 , FMW20N60S1HF , FMW30N60S1HF , FMW47N60S1HF , FMW79N60S1HF , FP10W50C , FP10W50VX2 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
