FMV30N60S1 PDF Specs and Replacement
Type Designator: FMV30N60S1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 4670 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO-220F
FMV30N60S1 substitution
FMV30N60S1 PDF Specs
fmv30n60s1.pdf
http //www.fujielectric.com/products/semiconductor/ FMV30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-220F(SLS) Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) Power condi... See More ⇒
Detailed specifications: FMV19N60E , FMV19N60ES , FMV20N50E , FMV20N50ES , FMV20N60S1 , FMV21N50ES , FMV23N50ES , FMV24N25G , IRF530 , FMW20N60S1HF , FMW30N60S1HF , FMW47N60S1HF , FMW79N60S1HF , FP10W50C , FP10W50VX2 , FP10W90 , FP10W90HVX2 .
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