All MOSFET. FMV30N60S1 Datasheet

 

FMV30N60S1 Datasheet and Replacement


   Type Designator: FMV30N60S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 73 nC
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 4670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220F
 

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FMV30N60S1 Datasheet (PDF)

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FMV30N60S1

http://www.fujielectric.com/products/semiconductor/FMV30N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-220F(SLS)Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)TelecomSource(S)Power condi

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FDP15N50 | SE18NS65A | IPP60R099C6

Keywords - FMV30N60S1 MOSFET datasheet

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