All MOSFET. FMV30N60S1 Datasheet

 

FMV30N60S1 Datasheet and Replacement


   Type Designator: FMV30N60S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 4670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220F
 

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FMV30N60S1 Datasheet (PDF)

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FMV30N60S1

http://www.fujielectric.com/products/semiconductor/FMV30N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-220F(SLS)Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)TelecomSource(S)Power condi

Datasheet: FMV19N60E , FMV19N60ES , FMV20N50E , FMV20N50ES , FMV20N60S1 , FMV21N50ES , FMV23N50ES , FMV24N25G , STP80NF70 , FMW20N60S1HF , FMW30N60S1HF , FMW47N60S1HF , FMW79N60S1HF , FP10W50C , FP10W50VX2 , FP10W90 , FP10W90HVX2 .

History: 2SK356 | FMV24N25G

Keywords - FMV30N60S1 MOSFET datasheet

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