FMW47N60S1HF Specs and Replacement

Type Designator: FMW47N60S1HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 83 nS

Cossⓘ - Output Capacitance: 8400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-247

FMW47N60S1HF substitution

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FMW47N60S1HF datasheet

 ..1. Size:579K  fuji
 fmw47n60s1hf.pdf pdf_icon

FMW47N60S1HF

http //www.fujielectric.com/products/semiconductor/ FMW47N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-247-P2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) ... See More ⇒

 ..2. Size:213K  inchange semiconductor
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FMW47N60S1HF

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Detailed specifications: FMV20N50ES, FMV20N60S1, FMV21N50ES, FMV23N50ES, FMV24N25G, FMV30N60S1, FMW20N60S1HF, FMW30N60S1HF, AON7506, FMW79N60S1HF, FP10W50C, FP10W50VX2, FP10W90, FP10W90HVX2, FP11W60C3, FP20W50VX2, FP20W60C3

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