FMW47N60S1HF Datasheet and Replacement
Type Designator: FMW47N60S1HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 8400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-247
FMW47N60S1HF substitution
FMW47N60S1HF Datasheet (PDF)
fmw47n60s1hf.pdf

http://www.fujielectric.com/products/semiconductor/FMW47N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)
fmw47n60s1hf.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMW47N60S1HFFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: FMV20N50ES , FMV20N60S1 , FMV21N50ES , FMV23N50ES , FMV24N25G , FMV30N60S1 , FMW20N60S1HF , FMW30N60S1HF , 2N7002 , FMW79N60S1HF , FP10W50C , FP10W50VX2 , FP10W90 , FP10W90HVX2 , FP11W60C3 , FP20W50VX2 , FP20W60C3 .
History: IPT012N08N5
Keywords - FMW47N60S1HF MOSFET datasheet
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FMW47N60S1HF replacement
History: IPT012N08N5



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