All MOSFET. FMW47N60S1HF Datasheet

 

FMW47N60S1HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMW47N60S1HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 8400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-247

 FMW47N60S1HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMW47N60S1HF Datasheet (PDF)

 ..1. Size:579K  fuji
 fmw47n60s1hf.pdf

FMW47N60S1HF FMW47N60S1HF

http://www.fujielectric.com/products/semiconductor/FMW47N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)

 ..2. Size:213K  inchange semiconductor
 fmw47n60s1hf.pdf

FMW47N60S1HF FMW47N60S1HF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMW47N60S1HFFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI4459ADY | 2SJ540 | QM3018D | MPSW65M170

 

 
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