FMW47N60S1HF MOSFET. Datasheet pdf. Equivalent
Type Designator: FMW47N60S1HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 125 nC
trⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 8400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-247
FMW47N60S1HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMW47N60S1HF Datasheet (PDF)
fmw47n60s1hf.pdf
http://www.fujielectric.com/products/semiconductor/FMW47N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)
fmw47n60s1hf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMW47N60S1HFFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
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