FP8V50 Specs and Replacement
Type Designator: FP8V50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: ITO-220
FP8V50 substitution
- MOSFET ⓘ Cross-Reference Search
FP8V50 datasheet
Detailed specifications: FP10W90, FP10W90HVX2, FP11W60C3, FP20W50VX2, FP20W60C3, FP3W90, FP5W90HVX2, FP7W90HVX2, RFP50N06, FQA10N60C, FQA10N80, FQA10N80C, FQA11N90, FQA11N90C, FQA12N60, FQA12P20, FQA13N50
Keywords - FP8V50 MOSFET specs
FP8V50 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FMV06N60E | FQA24N50F109
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