FQA10N80 MOSFET PDF: N-Ch, 800V, 9.8A. Full specification with pinout and replacement list

FQA10N80 PDF Specs and Replacement

   Type Designator: FQA10N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO-3P

FQA10N80 substitution

- MOSFET ⓘ Cross-Reference Search

FQA10N80 PDF Specs

..1. Size:675K fairchild semi
fqa10n80.pdf pdf_icon

September 2000 TM QFET FQA10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tail... See More ⇒

0.1. Size:800K fairchild semi
fqa10n80c.pdf pdf_icon

September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to ... See More ⇒

0.2. Size:806K fairchild semi
fqa10n80c f109.pdf pdf_icon

August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to... See More ⇒

0.3. Size:1463K onsemi
fqa10n80c-f109.pdf pdf_icon

FQA10N80C-F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using ON Semiconductor s proprietary planar stripe and Low Gate Charge (Typ. 44 nC) DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF) been especiall... See More ⇒

Detailed specifications: FP11W60C3 , FP20W50VX2 , FP20W60C3 , FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , AO3407 , FQA10N80C , FQA11N90 , FQA11N90C , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 .