All MOSFET. FQA12P20 Datasheet

 

FQA12P20 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA12P20

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 12.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 195 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.47 Ohm

Package: TO-3PN

FQA12P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA12P20 Datasheet (PDF)

1.1. fqa12p20.pdf Size:652K _upd-mosfet

FQA12P20
FQA12P20

May 2000 TM QFET QFET QFET QFET FQA12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been

5.1. fqa12n60.pdf Size:535K _upd-mosfet

FQA12P20
FQA12P20

April 2000 TM QFET QFET QFET QFET FQA12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been e

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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