All MOSFET. FQA12P20 Datasheet

 

FQA12P20 Datasheet and Replacement


   Type Designator: FQA12P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-3PN
 

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FQA12P20 Datasheet (PDF)

 ..1. Size:652K  fairchild semi
 fqa12p20.pdf pdf_icon

FQA12P20

May 2000TMQFETQFETQFETQFETFQA12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12.6A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

 9.1. Size:535K  fairchild semi
 fqa12n60.pdf pdf_icon

FQA12P20

April 2000TMQFETQFETQFETQFETFQA12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been e

Datasheet: FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , FQA11N90 , FQA11N90C , FQA12N60 , IRFZ24N , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 .

History: PZD502CYB | 2SK2524-01MR

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