FQA12P20 MOSFET PDF: P-Ch, 200V, 12.6A. Full specification with pinout and replacement list

FQA12P20 PDF Specs and Replacement

   Type Designator: FQA12P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-3PN

FQA12P20 substitution

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FQA12P20 PDF Specs

..1. Size:652K fairchild semi
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May 2000 TM QFET QFET QFET QFET FQA12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12.6A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been... See More ⇒

9.1. Size:535K fairchild semi
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April 2000 TM QFET QFET QFET QFET FQA12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been e... See More ⇒

Detailed specifications: FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , FQA11N90 , FQA11N90C , FQA12N60 , STF13NM60N , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 .