FQA14N30 PDF and Equivalents Search

 

FQA14N30 PDF Specs and Replacement


   Type Designator: FQA14N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-3P
 

 FQA14N30 substitution

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FQA14N30 PDF Specs

 ..1. Size:717K  fairchild semi
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FQA14N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 15A, 300V, RDS(on) = 0.29 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been e... See More ⇒

 9.1. Size:687K  fairchild semi
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FQA14N30

September 2000 TM QFET QFET QFET QFET FQA140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has... See More ⇒

 9.2. Size:2504K  onsemi
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FQA14N30

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.3. Size:259K  inchange semiconductor
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FQA14N30

isc N-Channel MOSFET Transistor FQA140N10 FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in audio amplifier, high efficiency switching D... See More ⇒

Detailed specifications: FQA10N80C , FQA11N90 , FQA11N90C , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 , P60NF06 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , FQA22P10 , FQA24N50F109 .

Keywords - FQA14N30 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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