FQA24N50F109 Specs and Replacement

Type Designator: FQA24N50F109

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-3PN

FQA24N50F109 substitution

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FQA24N50F109 datasheet

 5.1. Size:641K  fairchild semi
 fqa24n50f.pdf pdf_icon

FQA24N50F109

September 2001 TM FRFET FQA24N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especially tail... See More ⇒

 5.2. Size:210K  inchange semiconductor
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FQA24N50F109

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQA24N50F FEATURES With TO-3PN packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 6.1. Size:1520K  fairchild semi
 fqa24n50.pdf pdf_icon

FQA24N50F109

June 2014 FQA24N50 N-Channel QFET MOSFET 500 V, 24 A, 200 m Features Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 90 nC) stripe, DMOS technology. Low Crss (Typ. 55 pF) This advanced technology has been e... See More ⇒

 6.2. Size:749K  fairchild semi
 fqa24n50 f109.pdf pdf_icon

FQA24N50F109

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been e... See More ⇒

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Detailed specifications: FQA14N30, FQA16N25C, FQA16N50, FQA17N40, FQA17P10, FQA19N20L, FQA20N40, FQA22P10, IRFZ46N, FQA24N50F, FQA28N15F109, FQA28N50F109, FQA28N50F, FQA33N10, FQA33N10L, FQA34N20, FQA34N20L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.