FQA24N50F109 Datasheet and Replacement. Cross Reference Search

FQA24N50F109 Datasheet (PDF)

5.1. Size:641K fairchild semi
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September 2001TMFRFETFQA24N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especially tail

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQA24N50FFEATURESWith TO-3PN packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

6.1. Size:1520K fairchild semi
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June 2014FQA24N50N-Channel QFET MOSFET500 V, 24 A, 200 mFeatures Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 90 nC)stripe, DMOS technology. Low Crss (Typ. 55 pF)This advanced technology has been e

6.2. Size:749K fairchild semi
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April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been e

Datasheet: FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , FQA22P10 , STP65NF06 , FQA24N50F , FQA28N15F109 , FQA28N50F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 , FQA34N20L .