FQA24N50F MOSFET PDF: N-Ch, 500V, 24A. Full specification with pinout and replacement list

FQA24N50F PDF Specs and Replacement

   Type Designator: FQA24N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-3PN

FQA24N50F substitution

- MOSFET ⓘ Cross-Reference Search

FQA24N50F PDF Specs

..1. Size:641K fairchild semi
fqa24n50f.pdf pdf_icon

September 2001 TM FRFET FQA24N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especially tail... See More ⇒

..2. Size:210K inchange semiconductor
fqa24n50f.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQA24N50F FEATURES With TO-3PN packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

6.1. Size:1520K fairchild semi
fqa24n50.pdf pdf_icon

June 2014 FQA24N50 N-Channel QFET MOSFET 500 V, 24 A, 200 m Features Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 90 nC) stripe, DMOS technology. Low Crss (Typ. 55 pF) This advanced technology has been e... See More ⇒

6.2. Size:749K fairchild semi
fqa24n50 f109.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been e... See More ⇒