All MOSFET. FQA33N10L Datasheet

 

FQA33N10L Datasheet and Replacement


   Type Designator: FQA33N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 163 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 470 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-3P
      - MOSFET Cross-Reference Search

 

FQA33N10L Datasheet (PDF)

 ..1. Size:644K  fairchild semi
 fqa33n10l.pdf pdf_icon

FQA33N10L

September 2000TMQFETQFETQFETQFETFQA33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology

 6.1. Size:566K  fairchild semi
 fqa33n10.pdf pdf_icon

FQA33N10L

April 2000TMQFETQFETQFETQFETFQA33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has been e

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HPW750N20SPA | 2SK4096LS | WML11N80M3 | H8N65P | FDB8860 | NTK3043N | UT8205A

Keywords - FQA33N10L MOSFET datasheet

 FQA33N10L cross reference
 FQA33N10L equivalent finder
 FQA33N10L lookup
 FQA33N10L substitution
 FQA33N10L replacement

 

 
Back to Top

 


 
.