All MOSFET. FQA33N10L Datasheet

 

FQA33N10L Datasheet and Replacement


   Type Designator: FQA33N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 163 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 470 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-3P
 

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FQA33N10L Datasheet (PDF)

 ..1. Size:644K  fairchild semi
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FQA33N10L

September 2000TMQFETQFETQFETQFETFQA33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology

 6.1. Size:566K  fairchild semi
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FQA33N10L

April 2000TMQFETQFETQFETQFETFQA33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has been e

Datasheet: FQA20N40 , FQA22P10 , FQA24N50F109 , FQA24N50F , FQA28N15F109 , FQA28N50F109 , FQA28N50F , FQA33N10 , IRF9640 , FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 .

History: BLM3401A | SI2323DDS-T1-GE3 | UTT150N03 | XGP6510B | UPA2718AGR | APT10035B2LL | STD30NF03L

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