2SJ198 Datasheet. Specs and Replacement

Type Designator: 2SJ198  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO92

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2SJ198 substitution

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2SJ198 datasheet

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2SJ198

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2SJ198

Ordering number EN3766 P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ193] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter ... See More ⇒

 9.2. Size:89K  sanyo
2sj191.pdf pdf_icon

2SJ198

Ordering number EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ191] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SJ191] 6.5 2.3 5.0 0.5 4 0.5 0... See More ⇒

 9.3. Size:93K  sanyo
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2SJ198

Ordering number EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ190] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter ... See More ⇒

Detailed specifications: 2SJ166, 2SJ178, 2SJ179, 2SJ180, 2SJ184, 2SJ185, 2SJ196, 2SJ197, AON7408, 2SJ199, 2SJ202, 2SJ203, 2SJ204, 2SJ205, 2SJ206, 2SJ207, 2SJ208

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