All MOSFET. FQA7N60 Datasheet

 

FQA7N60 Datasheet and Replacement


   Type Designator: FQA7N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 152 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-3P
 

 FQA7N60 substitution

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FQA7N60 Datasheet (PDF)

 ..1. Size:581K  fairchild semi
 fqa7n60.pdf pdf_icon

FQA7N60

April 2000TMQFETQFETQFETQFETFQA7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.7A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp

 9.1. Size:609K  fairchild semi
 fqa7n80c.pdf pdf_icon

FQA7N60

TMQFETFQA7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast

 9.2. Size:732K  fairchild semi
 fqa7n80.pdf pdf_icon

FQA7N60

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been es

 9.3. Size:798K  fairchild semi
 fqa7n80c f109.pdf pdf_icon

FQA7N60

September 2007 QFETFQA7N80C_F109800V N-Channel MOSFETFeatures Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 10pF)This advanced technology has been especially tailored

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Datasheet: FQA47P06 , FQA48N20 , FQA55N10 , FQA5N90 , FQA65N06 , FQA6N70 , FQA6N80 , FQA6N90 , 50N06 , FQA7N80 , FQA7N80C , FQA7N90 , FQA7N90M , FQA85N06 , FQA8N90C , FQA90N10V2 , FQA9N50 .

History: 2SK3664 | 2SK3663 | SVGP103R0NP7 | 6N65KL-TMS-T | 2SK2135 | PTA26N60 | AM110N06-08P

Keywords - FQA7N60 MOSFET datasheet

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