FQA7N60. Аналоги и основные параметры

Наименование производителя: FQA7N60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 152 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 80 ns

Cossⓘ - Выходная емкость: 135 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm

Тип корпуса: TO-3P

Аналог (замена) для FQA7N60

- подборⓘ MOSFET транзистора по параметрам

 

FQA7N60 даташит

 ..1. Size:581K  fairchild semi
 fqa7n60.pdf pdf_icon

FQA7N60

April 2000 TM QFET QFET QFET QFET FQA7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.7A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been esp

 9.1. Size:609K  fairchild semi
 fqa7n80c.pdf pdf_icon

FQA7N60

TM QFET FQA7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast

 9.2. Size:732K  fairchild semi
 fqa7n80.pdf pdf_icon

FQA7N60

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.2A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been es

 9.3. Size:798K  fairchild semi
 fqa7n80c f109.pdf pdf_icon

FQA7N60

September 2007 QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 10pF) This advanced technology has been especially tailored

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQA47P06, FQA48N20, FQA55N10, FQA5N90, FQA65N06, FQA6N70, FQA6N80, FQA6N90, 50N06, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, FQA8N90C, FQA90N10V2, FQA9N50