All MOSFET. FQA7N90M Datasheet

 

FQA7N90M Datasheet and Replacement


   Type Designator: FQA7N90M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-3P
 

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FQA7N90M Datasheet (PDF)

 ..1. Size:677K  fairchild semi
 fqa7n90m.pdf pdf_icon

FQA7N90M

January 2002TMQFETFQA7N90M900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 900V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored

 7.1. Size:674K  fairchild semi
 fqa7n90.pdf pdf_icon

FQA7N90M

March 2001TMQFETFQA7N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 900V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored

 9.1. Size:609K  fairchild semi
 fqa7n80c.pdf pdf_icon

FQA7N90M

TMQFETFQA7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast

 9.2. Size:732K  fairchild semi
 fqa7n80.pdf pdf_icon

FQA7N90M

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been es

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Datasheet: FQA65N06 , FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 , FQA7N80 , FQA7N80C , FQA7N90 , IRF1404 , FQA85N06 , FQA8N90C , FQA90N10V2 , FQA9N50 , FQA9N90C , FQAF10N80 , FQAF11N40 , FQAF11N90 .

History: IRFBC30LPBF | APT6015LVFR | 6N60KL-TND-R | AON7466 | SFF44N50M | AP1RA03GMT-HF | NCE65N260F

Keywords - FQA7N90M MOSFET datasheet

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