FQA7N90M. Аналоги и основные параметры

Наименование производителя: FQA7N90M

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 210 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 80 ns

Cossⓘ - Выходная емкость: 140 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm

Тип корпуса: TO-3P

Аналог (замена) для FQA7N90M

- подборⓘ MOSFET транзистора по параметрам

 

FQA7N90M даташит

 ..1. Size:677K  fairchild semi
 fqa7n90m.pdf pdf_icon

FQA7N90M

January 2002 TM QFET FQA7N90M 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 900V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored

 7.1. Size:674K  fairchild semi
 fqa7n90.pdf pdf_icon

FQA7N90M

March 2001 TM QFET FQA7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 900V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored

 9.1. Size:609K  fairchild semi
 fqa7n80c.pdf pdf_icon

FQA7N90M

TM QFET FQA7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast

 9.2. Size:732K  fairchild semi
 fqa7n80.pdf pdf_icon

FQA7N90M

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.2A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been es

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