FQAF28N15 Datasheet and Replacement
Type Designator: FQAF28N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 102 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-3PF
FQAF28N15 substitution
FQAF28N15 Datasheet (PDF)
fqaf28n15.pdf

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 22A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es
fqaf22p10.pdf

TMQFETFQAF22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.6A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 40 nC)planar stripe, DMOS technology. Low Crss ( typically 160 pF)This advanced technology has been especially tailored
Datasheet: FQAF16N25 , FQAF16N25C , FQAF17N40 , FQAF17P10 , FQAF19N20 , FQAF19N20L , FQAF19N60 , FQAF22P10 , K3569 , FQAF33N10 , FQAF33N10L , FQAF34N25 , FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 .
History: AON1611 | CS2N65A3 | IXFP05N100M | MTN003N03S3 | FQD3P20TF | AFN3458 | CHM5506JGP
Keywords - FQAF28N15 MOSFET datasheet
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History: AON1611 | CS2N65A3 | IXFP05N100M | MTN003N03S3 | FQD3P20TF | AFN3458 | CHM5506JGP



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