All MOSFET. FQAF28N15 Datasheet

 

FQAF28N15 Datasheet and Replacement


   Type Designator: FQAF28N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 102 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-3PF
 

 FQAF28N15 substitution

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FQAF28N15 Datasheet (PDF)

 ..1. Size:781K  fairchild semi
 fqaf28n15.pdf pdf_icon

FQAF28N15

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 22A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

 9.1. Size:627K  fairchild semi
 fqaf22p10.pdf pdf_icon

FQAF28N15

TMQFETFQAF22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.6A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 40 nC)planar stripe, DMOS technology. Low Crss ( typically 160 pF)This advanced technology has been especially tailored

Datasheet: FQAF16N25 , FQAF16N25C , FQAF17N40 , FQAF17P10 , FQAF19N20 , FQAF19N20L , FQAF19N60 , FQAF22P10 , 2N7002 , FQAF33N10 , FQAF33N10L , FQAF34N25 , FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 .

History: SVG103R0NP7 | JCS7N80CH | SVG103R0NSTR | JCS7N80FH

Keywords - FQAF28N15 MOSFET datasheet

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