FQAF28N15 Specs and Replacement

Type Designator: FQAF28N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 102 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO-3PF

FQAF28N15 substitution

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FQAF28N15 datasheet

 ..1. Size:781K  fairchild semi
 fqaf28n15.pdf pdf_icon

FQAF28N15

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 22A, 150V, RDS(on) = 0.09 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es... See More ⇒

 9.1. Size:627K  fairchild semi
 fqaf22p10.pdf pdf_icon

FQAF28N15

TM QFET FQAF22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -16.6A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 40 nC) planar stripe, DMOS technology. Low Crss ( typically 160 pF) This advanced technology has been especially tailored ... See More ⇒

Detailed specifications: FQAF16N25, FQAF16N25C, FQAF17N40, FQAF17P10, FQAF19N20, FQAF19N20L, FQAF19N60, FQAF22P10, 2N7002, FQAF33N10, FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, FQAF44N10, FQAF47P06, FQAF58N08

Keywords - FQAF28N15 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.