FQAF7N80 Specs and Replacement

Type Designator: FQAF7N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-3PF

FQAF7N80 substitution

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FQAF7N80 datasheet

 ..1. Size:766K  fairchild semi
 fqaf7n80.pdf pdf_icon

FQAF7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been esp... See More ⇒

 8.1. Size:681K  fairchild semi
 fqaf7n90.pdf pdf_icon

FQAF7N80

March 2001 TM QFET FQAF7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.2A, 900V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored... See More ⇒

 9.1. Size:729K  fairchild semi
 fqaf70n15.pdf pdf_icon

FQAF7N80

April 2000 TM QFET QFET QFET QFET N-ChanneI Power MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 44A, 150 V, RDS(on) = 0.028 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 135 nC) planar stripe, DMOS technology. Low Crss ( typical 135 nC) This advanced technology ha... See More ⇒

Detailed specifications: FQAF44N10, FQAF47P06, FQAF58N08, FQAF5N90, FQAF65N06, FQAF6N80, FQAF6N90, FQAF70N15, 5N65, FQAF7N90, FQAF8N80, FQAF90N08, FQAF9N50, FQAF9P25, FQB10N20C, FQB10N20LTM, FQB10N60CTM

Keywords - FQAF7N80 MOSFET specs

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