FQAF9N50 Specs and Replacement
Type Designator: FQAF9N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-3PF
FQAF9N50 substitution
- MOSFET ⓘ Cross-Reference Search
FQAF9N50 datasheet
fqaf9n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.2A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been... See More ⇒
fqaf9p25.pdf
December 2000 TM QFET QFET QFET QFET FQAF9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -7.1A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is e... See More ⇒
fqaf90n08.pdf
January 2001 TM QFET QFET QFET QFET FQAF90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 56A, 80V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 200 pF) This advanced technology has been... See More ⇒
Detailed specifications: FQAF65N06, FQAF6N80, FQAF6N90, FQAF70N15, FQAF7N80, FQAF7N90, FQAF8N80, FQAF90N08, IRF530, FQAF9P25, FQB10N20C, FQB10N20LTM, FQB10N60CTM, FQB11N40CTM, FQB11N40TM, FQB11P06TM, FQB12N50TMAM002
Keywords - FQAF9N50 MOSFET specs
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