FQAF9N50 Datasheet and Replacement. Cross Reference Search

FQAF9N50 Datasheet (PDF)

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April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

9.1. Size:557K fairchild semi
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December 2000TMQFETQFETQFETQFETFQAF9P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, RDS(on) = 0.62 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology is e

9.2. Size:673K fairchild semi
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January 2001TMQFETQFETQFETQFETFQAF90N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 56A, 80V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 200 pF)This advanced technology has been

Datasheet: FQAF65N06 , FQAF6N80 , FQAF6N90 , FQAF70N15 , FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , AO4407 , FQAF9P25 , FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM , FQB11P06TM , FQB12N50TMAM002 .