All MOSFET. FQAF9N50 Datasheet

 

FQAF9N50 Datasheet and Replacement


   Type Designator: FQAF9N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO-3PF
 

 FQAF9N50 substitution

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FQAF9N50 Datasheet (PDF)

 ..1. Size:686K  fairchild semi
 fqaf9n50.pdf pdf_icon

FQAF9N50

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

 9.1. Size:557K  fairchild semi
 fqaf9p25.pdf pdf_icon

FQAF9N50

December 2000TMQFETQFETQFETQFETFQAF9P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, RDS(on) = 0.62 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology is e

 9.2. Size:673K  fairchild semi
 fqaf90n08.pdf pdf_icon

FQAF9N50

January 2001TMQFETQFETQFETQFETFQAF90N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 56A, 80V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 200 pF)This advanced technology has been

Datasheet: FQAF65N06 , FQAF6N80 , FQAF6N90 , FQAF70N15 , FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , AO4407 , FQAF9P25 , FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM , FQB11P06TM , FQB12N50TMAM002 .

History: HM6804 | TF218

Keywords - FQAF9N50 MOSFET datasheet

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