All MOSFET. FQB12P10TM Datasheet

 

FQB12P10TM Datasheet and Replacement


   Type Designator: FQB12P10TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: D2-PAK
 

 FQB12P10TM substitution

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FQB12P10TM Datasheet (PDF)

 ..1. Size:634K  fairchild semi
 fqb12p10tm.pdf pdf_icon

FQB12P10TM

TMQFETFQB12P10 / FQI12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailo

 8.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf pdf_icon

FQB12P10TM

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 8.2. Size:979K  fairchild semi
 fqb12p20tm.pdf pdf_icon

FQB12P10TM

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 8.3. Size:309K  onsemi
 fqb12p20.pdf pdf_icon

FQB12P10TM

MOSFET P-Channel, QFET)-200 V, -11.5 A, 470 mWFQB12P20General DescriptionThese P-Channel enhancement mode power field effect transistorswww.onsemi.comare produced using ON Semiconductors proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeVDSS RDS(ON) MAX ID MAXon-state resistance, provide superior switching perf

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Datasheet: FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM , FQB11P06TM , FQB12N50TMAM002 , FQB12N60CTM , FQB12N60TMAM002 , P0903BDG , FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 , FQB14N30TM .

History: 2SK1094 | YJL2305A | PHP225 | 2SK656 | HMS15N60D | S40N09R | QM6008D

Keywords - FQB12P10TM MOSFET datasheet

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