FQB12P10TM Specs and Replacement

Type Designator: FQB12P10TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: D2-PAK

FQB12P10TM substitution

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FQB12P10TM datasheet

 ..1. Size:634K  fairchild semi
 fqb12p10tm.pdf pdf_icon

FQB12P10TM

TM QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailo... See More ⇒

 8.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf pdf_icon

FQB12P10TM

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe... See More ⇒

 8.2. Size:979K  fairchild semi
 fqb12p20tm.pdf pdf_icon

FQB12P10TM

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe... See More ⇒

 8.3. Size:309K  onsemi
 fqb12p20.pdf pdf_icon

FQB12P10TM

MOSFET P-Channel, QFET) -200 V, -11.5 A, 470 mW FQB12P20 General Description These P-Channel enhancement mode power field effect transistors www.onsemi.com are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize VDSS RDS(ON) MAX ID MAX on-state resistance, provide superior switching perf... See More ⇒

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Detailed specifications: FQB10N20LTM, FQB10N60CTM, FQB11N40CTM, FQB11N40TM, FQB11P06TM, FQB12N50TMAM002, FQB12N60CTM, FQB12N60TMAM002, IRF1407, FQB12P20TM, FQB13N06LTM, FQB13N06TM, FQB13N10LTM, FQB13N10, FQB13N50CTM, FQB14N15, FQB14N30TM

Keywords - FQB12P10TM MOSFET specs

 FQB12P10TM cross reference

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 FQB12P10TM replacement

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