FQB12P10TM. Аналоги и основные параметры

Наименование производителя: FQB12P10TM

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 160 ns

Cossⓘ - Выходная емкость: 220 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB12P10TM

- подборⓘ MOSFET транзистора по параметрам

 

FQB12P10TM даташит

 ..1. Size:634K  fairchild semi
 fqb12p10tm.pdf pdf_icon

FQB12P10TM

TM QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailo

 8.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf pdf_icon

FQB12P10TM

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe

 8.2. Size:979K  fairchild semi
 fqb12p20tm.pdf pdf_icon

FQB12P10TM

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe

 8.3. Size:309K  onsemi
 fqb12p20.pdf pdf_icon

FQB12P10TM

MOSFET P-Channel, QFET) -200 V, -11.5 A, 470 mW FQB12P20 General Description These P-Channel enhancement mode power field effect transistors www.onsemi.com are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize VDSS RDS(ON) MAX ID MAX on-state resistance, provide superior switching perf

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