All MOSFET. FQB1N60TM Datasheet

 

FQB1N60TM Datasheet and Replacement


   Type Designator: FQB1N60TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: D2-PAK
 

 FQB1N60TM substitution

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FQB1N60TM Datasheet (PDF)

 ..1. Size:544K  fairchild semi
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FQB1N60TM

April 2000TMQFETQFETQFETQFETFQB1N60 / FQI1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.2A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

Datasheet: FQB17N08TM , FQB17P06TM , FQB17P10TM , FQB19N10LTM , FQB19N10TM , FQB19N20CTM , FQB19N20LTM , FQB19N20TM , RU7088R , FQB1P50TM , FQB20N06LTM , FQB20N06TM , FQB22P10TM , FQB24N08TM , FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM .

History: HY5012A | ME2345AS

Keywords - FQB1N60TM MOSFET datasheet

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