All MOSFET. FQB20N06LTM Datasheet

 

FQB20N06LTM Datasheet and Replacement


   Type Designator: FQB20N06LTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: D2-PAK
 

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FQB20N06LTM Datasheet (PDF)

 ..1. Size:681K  fairchild semi
 fqb20n06ltm.pdf pdf_icon

FQB20N06LTM

May 2001TMQFETFQB20N06L / FQI20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been esp

 6.1. Size:669K  fairchild semi
 fqb20n06tm.pdf pdf_icon

FQB20N06LTM

May 2001TMQFETFQB20N06 / FQI20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

Datasheet: FQB17P10TM , FQB19N10LTM , FQB19N10TM , FQB19N20CTM , FQB19N20LTM , FQB19N20TM , FQB1N60TM , FQB1P50TM , IRF1405 , FQB20N06TM , FQB22P10TM , FQB24N08TM , FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , FQB2N50TM .

History: HY5012A | ME2345AS

Keywords - FQB20N06LTM MOSFET datasheet

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