FQB22P10TM Datasheet and Replacement. Cross Reference Search

FQB22P10TM Datasheet (PDF)

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February 2009QFETFQB22P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 160 pF)This advanced technology has been especia

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October 2008QFETFQB22P10 / FQI22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 160 pF)This advanced technology has been espe

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQB19N10TM , FQB19N20CTM , FQB19N20LTM , FQB19N20TM , FQB1N60TM , FQB1P50TM , FQB20N06LTM , FQB20N06TM , AON7403 , FQB24N08TM , FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , FQB2N50TM , FQB2N60TM , FQB2N80TM .