FQB22P10TM. Аналоги и основные параметры
Наименование производителя: FQB22P10TM
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 170 ns
Cossⓘ - Выходная емкость: 460 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB22P10TM
- подборⓘ MOSFET транзистора по параметрам
FQB22P10TM даташит
fqb22p10tm f085.pdf
February 2009 QFET FQB22P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especia
fqb22p10tm fqb22p10 fqi22p10.pdf
October 2008 QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been espe
fqb22p10.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FQB19N10TM, FQB19N20CTM, FQB19N20LTM, FQB19N20TM, FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, IRF9640, FQB24N08TM, FQB25N33TM, FQB27N25TMAM002, FQB27P06TM, FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM
History: HM25P03K
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Список транзисторов
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