FQB25N33TM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB25N33TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 330 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58 nC
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm
Package: D2-PAK
FQB25N33TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB25N33TM Datasheet (PDF)
fqb25n33tm.pdf
September 2006 QFETFQB25N33330V N-Channel MOSFETFeatures General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichilds proprietary, Low gate charge (typical 58nC)planar stripe, DMOS technology. Low Crss (typical 40pF)This advanced technology has been especially tailor
fqb25n33tm f085.pdf
April 2010tmFQB25N33TM_F085330V N-Channel MOSFETFeatures General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichilds proprietary, Low gate charge (typical 58nC)planar stripe, DMOS technology. Low Crss (typical 40pF)This advanced technology has been especially tailored t
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
