FQB25N33TM Specs and Replacement

Type Designator: FQB25N33TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 330 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: D2-PAK

FQB25N33TM substitution

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FQB25N33TM datasheet

 ..1. Size:1009K  fairchild semi
 fqb25n33tm.pdf pdf_icon

FQB25N33TM

September 2006 QFET FQB25N33 330V N-Channel MOSFET Features General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild s proprietary, Low gate charge (typical 58nC) planar stripe, DMOS technology. Low Crss (typical 40pF) This advanced technology has been especially tailor... See More ⇒

 ..2. Size:1209K  fairchild semi
 fqb25n33tm f085.pdf pdf_icon

FQB25N33TM

April 2010 tm FQB25N33TM_F085 330V N-Channel MOSFET Features General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild s proprietary, Low gate charge (typical 58nC) planar stripe, DMOS technology. Low Crss (typical 40pF) This advanced technology has been especially tailored t... See More ⇒

Detailed specifications: FQB19N20LTM, FQB19N20TM, FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, FQB22P10TM, FQB24N08TM, AON7403, FQB27N25TMAM002, FQB27P06TM, FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM, FQB2N90TM, FQB2NA90TM

Keywords - FQB25N33TM MOSFET specs

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