All MOSFET. FQB25N33TM Datasheet

 

FQB25N33TM Datasheet and Replacement


   Type Designator: FQB25N33TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 330 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: D2-PAK
 

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FQB25N33TM Datasheet (PDF)

 ..1. Size:1009K  fairchild semi
 fqb25n33tm.pdf pdf_icon

FQB25N33TM

September 2006 QFETFQB25N33330V N-Channel MOSFETFeatures General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichilds proprietary, Low gate charge (typical 58nC)planar stripe, DMOS technology. Low Crss (typical 40pF)This advanced technology has been especially tailor

 ..2. Size:1209K  fairchild semi
 fqb25n33tm f085.pdf pdf_icon

FQB25N33TM

April 2010tmFQB25N33TM_F085330V N-Channel MOSFETFeatures General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichilds proprietary, Low gate charge (typical 58nC)planar stripe, DMOS technology. Low Crss (typical 40pF)This advanced technology has been especially tailored t

Datasheet: FQB19N20LTM , FQB19N20TM , FQB1N60TM , FQB1P50TM , FQB20N06LTM , FQB20N06TM , FQB22P10TM , FQB24N08TM , EMB04N03H , FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , FQB2N50TM , FQB2N60TM , FQB2N80TM , FQB2N90TM , FQB2NA90TM .

History: SPU07N60C3 | F5020-S

Keywords - FQB25N33TM MOSFET datasheet

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