FQB2N80TM Specs and Replacement

Type Designator: FQB2N80TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.3 Ohm

Package: D2-PAK

FQB2N80TM substitution

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FQB2N80TM datasheet

 ..1. Size:659K  fairchild semi
 fqb2n80tm.pdf pdf_icon

FQB2N80TM

September 2000 TM QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especi... See More ⇒

 9.1. Size:579K  fairchild semi
 fqb2n60tm.pdf pdf_icon

FQB2N80TM

April 2000 TM QFET QFET QFET QFET FQB2N60 / FQI2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology ... See More ⇒

 9.2. Size:720K  fairchild semi
 fqb2n50tm.pdf pdf_icon

FQB2N80TM

April 2000 TM QFET QFET QFET QFET FQB2N50 / FQI2N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technolog... See More ⇒

 9.3. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQB2N80TM

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technolo... See More ⇒

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Detailed specifications: FQB22P10TM, FQB24N08TM, FQB25N33TM, FQB27N25TMAM002, FQB27P06TM, FQB2N30TM, FQB2N50TM, FQB2N60TM, AO4407A, FQB2N90TM, FQB2NA90TM, FQB2P25TM, FQB2P40TM, FQB30N06LTM, FQB30N06TM, FQB32N12V2TM, FQB32N20CTM

Keywords - FQB2N80TM MOSFET specs

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