FQB2N80TM - аналоги и даташиты транзистора

 

FQB2N80TM - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQB2N80TM
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 6.3 Ohm
   Тип корпуса: D2-PAK
 

 Аналог (замена) для FQB2N80TM

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQB2N80TM Datasheet (PDF)

 ..1. Size:659K  fairchild semi
 fqb2n80tm.pdf pdf_icon

FQB2N80TM

September 2000TMQFETFQB2N80 / FQI2N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especi

 9.1. Size:579K  fairchild semi
 fqb2n60tm.pdf pdf_icon

FQB2N80TM

April 2000TMQFETQFETQFETQFETFQB2N60 / FQI2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 9.2. Size:720K  fairchild semi
 fqb2n50tm.pdf pdf_icon

FQB2N80TM

April 2000TMQFETQFETQFETQFETFQB2N50 / FQI2N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technolog

 9.3. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQB2N80TM

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQB22P10TM , FQB24N08TM , FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , FQB2N50TM , FQB2N60TM , BS170 , FQB2N90TM , FQB2NA90TM , FQB2P25TM , FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM .

 

 
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