FQB2P25TM Specs and Replacement

Type Designator: FQB2P25TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: D2-PAK

FQB2P25TM substitution

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FQB2P25TM datasheet

 ..1. Size:559K  fairchild semi
 fqb2p25tm fqi2p25tu.pdf pdf_icon

FQB2P25TM

April 2000 TM QFET QFET QFET QFET FQB2P25 / FQI2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technolo... See More ⇒

 9.1. Size:585K  fairchild semi
 fqb2p40tm.pdf pdf_icon

FQB2P25TM

December 2000 TM QFET QFET QFET QFET FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.0A, -400V, RDS(on) = 6.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced techno... See More ⇒

Detailed specifications: FQB27N25TMAM002, FQB27P06TM, FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM, FQB2N90TM, FQB2NA90TM, AO4468, FQB2P40TM, FQB30N06LTM, FQB30N06TM, FQB32N12V2TM, FQB32N20CTM, FQB33N10LTM, FQB33N10TM, FQB34N20LTM

Keywords - FQB2P25TM MOSFET specs

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