All MOSFET. FQB2P25TM Datasheet

 

FQB2P25TM Datasheet and Replacement


   Type Designator: FQB2P25TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: D2-PAK
 

 FQB2P25TM substitution

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FQB2P25TM Datasheet (PDF)

 ..1. Size:559K  fairchild semi
 fqb2p25tm fqi2p25tu.pdf pdf_icon

FQB2P25TM

April 2000TMQFETQFETQFETQFETFQB2P25 / FQI2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technolo

 9.1. Size:585K  fairchild semi
 fqb2p40tm.pdf pdf_icon

FQB2P25TM

December 2000TMQFETQFETQFETQFETFQB2P40 / FQI2P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.0A, -400V, RDS(on) = 6.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced techno

Datasheet: FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , FQB2N50TM , FQB2N60TM , FQB2N80TM , FQB2N90TM , FQB2NA90TM , IRFP064N , FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM , FQB33N10LTM , FQB33N10TM , FQB34N20LTM .

History: FTK2N65P

Keywords - FQB2P25TM MOSFET datasheet

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