FQB33N10TM Datasheet and Replacement. Cross Reference Search

FQB33N10TM Datasheet (PDF)

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October 2008QFETFQB33N10 / FQI33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has been especial

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October 2008QFETFQB33N10L / FQI33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQB2NA90TM , FQB2P25TM , FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM , FQB33N10LTM , IRF540 , FQB34N20LTM , FQB34N20TMAM002 , FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , FQB3N60CTM , FQB3N90TM .