FQB33N10TM. Аналоги и основные параметры
Наименование производителя: FQB33N10TM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 127 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 195 ns
Cossⓘ - Выходная емкость: 320 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB33N10TM
- подборⓘ MOSFET транзистора по параметрам
FQB33N10TM даташит
fqb33n10tm fqb33n10 fqi33n10.pdf
October 2008 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been especial
fqb33n10l fqi33n10l.pdf
October 2008 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been
fqb33n10ltm.pdf
October 2008 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been
fqb33n10.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FQB2NA90TM, FQB2P25TM, FQB2P40TM, FQB30N06LTM, FQB30N06TM, FQB32N12V2TM, FQB32N20CTM, FQB33N10LTM, IRF540N, FQB34N20LTM, FQB34N20TMAM002, FQB34P10TM, FQB3N25TM, FQB3N30TM, FQB3N40TM, FQB3N60CTM, FQB3N90TM
History: NVBGS6D5N15MC | ZXM64N035L3 | VS3606ATD
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